Specific Contact Resistivity Reduction Through Ar...

IEEE Electron Device Letters 2014 / 11 Vol. 35; Iss. 11

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

Kim, Gwang-Sik, Kim, Jeong-Kyu, Kim, Seung-Hwan, Jo, Jaesung, Shin, Changhwan, Park, Jin-Hong, Saraswat, Krishna C., Yu, Hyun-Yong
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2354679
Date:
November, 2014
File:
PDF, 1.23 MB
english, 2014
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