[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including package
Chvala, Ales, Donoval, Daniel, Molnar, Marian, Marek, Juraj, Pribytny, PatrikYear:
2015
Language:
english
DOI:
10.1109/SISPAD.2015.7292272
File:
PDF, 778 KB
english, 2015