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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier model
Marchewka, A., Waser, R., Menzel, S.Year:
2015
Language:
english
DOI:
10.1109/SISPAD.2015.7292318
File:
PDF, 526 KB
english, 2015