Atomic scale characterization of SiO2/4H-SiC interfaces in...

Solid State Communications 2015 / 11 Vol. 221

Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Beltrán, A.M., Duguay, S., Strenger, C., Bauer, A.J., Cristiano, F., Schamm-Chardon, S.
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Volume:
221
Language:
english
Journal:
Solid State Communications
DOI:
10.1016/j.ssc.2015.08.017
Date:
November, 2015
File:
PDF, 4.71 MB
english, 2015
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