Leakage current characteristics in MOCVD grown InAs quantum...

Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor

Islam, Sk Masiul, Sarkar, K., Banerji, P., Sarkar, Kalyan Jyoti, Pal, Biswajit
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Volume:
5
Year:
2015
Language:
english
Journal:
RSC Adv.
DOI:
10.1039/C5RA15642D
File:
PDF, 1.06 MB
english, 2015
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