![](/img/cover-not-exists.png)
[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - FinFET to nanowire transition at 5nm design rules
Smith, Lee, Munkang Choi,, Frey, Martin, Moroz, Victor, Ziegler, Anne, Luisier, MathieuYear:
2015
Language:
english
DOI:
10.1109/SISPAD.2015.7292307
File:
PDF, 725 KB
english, 2015