Modeling and Analysis of Room-Temperature Silicon Quantum...

Modeling and Analysis of Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor Logic Gates

Miralaie, M., Leilaeioun, M., Abbasian, K., Hasani, M.
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Volume:
11
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2014.3311
Date:
January, 2014
File:
PDF, 1.32 MB
english, 2014
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