[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - 12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•105 ION/IOFF
Huang, Cheng-Ying, Choudhary, Prateek, Lee, Sanghoon, Kraemer, Stephan, Chobpattana, Varistha, Thibeault, Brain, Mitchell, William, Stemmer, Susanne, Gossard, Arthur, Rodwell, MarkYear:
2015
Language:
english
DOI:
10.1109/DRC.2015.7175669
File:
PDF, 861 KB
english, 2015