[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
Lucci, Luca, Barbe, Jean-Charles, Pala, MarcoYear:
2015
Language:
english
DOI:
10.1109/SISPAD.2015.7292275
File:
PDF, 369 KB
english, 2015