Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE
Halder, N., Suseendran, J., Chakrabarti, S., Herrera, Miriam, Bonds, Marta, Browning, Nigel D.Volume:
10
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2010.2380
Date:
August, 2010
File:
PDF, 3.36 MB
english, 2010