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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electrically doped WTe2 tunnel transistors

Ilatikhameneh, Hesameddin, Rahman, Rajib, Appenzeller, Joerg, Klimeck, Gerhard
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Year:
2015
Language:
english
DOI:
10.1109/SISPAD.2015.7292311
File:
PDF, 1.95 MB
english, 2015
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