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Quantum Mechanical Device Modeling: FinFET Having an Isolated n+/p+ Gate Region Strapped with Poly-Silicon
Kim, Han-Geon, Kim, Joong-Sik, Kim, Young-Kyu, Won, TaeyoungVolume:
7
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2007.105
Date:
November, 2007
File:
PDF, 244 KB
english, 2007