Side effects in InAlN/GaN high electron mobility...

Microelectronic Engineering 2015 / 07 Vol. 142

Side effects in InAlN/GaN high electron mobility transistors

Kourdi, Z., Bouazza, B., Guen-Bouazza, A., Khaouani, M.
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Volume:
142
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.07.003
Date:
July, 2015
File:
PDF, 927 KB
english, 2015
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