Hot-Carrier Degradation and Bias-Temperature Instability in...

IEEE Transactions on Electron Devices 2015 / 11 Vol. 62; Iss. 11

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

Illarionov, Yury, Smith, Anderson, Vaziri, Sam, Ostling, Mikael, Mueller, Thomas, Lemme, Max, Grasser, Tibor
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2480704
Date:
November, 2015
File:
PDF, 2.14 MB
english, 2015
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