Redistribution of implanted Er in SiO2 on Si studied by...

Redistribution of implanted Er in SiO2 on Si studied by combined transmission electron microscopy and Rutherford backscattering analysis

D. Kollewe, T. Bachmann, W. Sigle
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Volume:
253
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0375-9601(99)00022-5
File:
PDF, 420 KB
english, 1999
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