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DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2
Yoon, Hyung Sup, Min, Byoung Gue, Lee, Jong Min, Kang, Dong Min, Ahn, Ho Kyun, Kim, Sung Il, Ju, Chul Won, Kim, Hae Cheon, Lim, Jong WonVolume:
67
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.67.654
Date:
August, 2015
File:
PDF, 930 KB
english, 2015