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[IEEE 2015 International Symposium on Next-Generation Electronics (ISNE) - Taipei, Taiwan (2015.5.4-2015.5.6)] 2015 International Symposium on Next-Generation Electronics (ISNE) - Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications
Prakash, Amit, Park, J-S., Song, J., Lim, S-J., Park, J-H., Woo, J., Cha, E., Hwang, HyunsangYear:
2015
Language:
english
DOI:
10.1109/ISNE.2015.7132027
File:
PDF, 2.03 MB
english, 2015