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Role of Transport During Transient Phenomena in AlGaN/GaN Heterostructure FETs
Mehari, Shlomo, Calahorra, Yonatan, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, DanVolume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2476959
Date:
November, 2015
File:
PDF, 1.07 MB
english, 2015