Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch...

IEEE Transactions on Electron Devices 2015 / 11 Vol. 62; Iss. 11

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Cho, Sung Haeng, Ko, Jong Beom, Ryu, Min Ki, Yang, Jong-Heon, Yeom, Hye-In, Lim, Sun Kwon, Hwang, Chi-Sun, Park, Sang-Hee Ko
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2479592
Date:
November, 2015
File:
PDF, 2.06 MB
english, 2015
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