![](/img/cover-not-exists.png)
Static and switching characteristics of 3.3 kV double channel-doped SiC vertical junction field effect transistor in cascode configuration
Shimizu, Haruka, Akiyama, Satoru, Yokoyama, Natsuki, Shima, Akio, Shimamoto, YasuhiroVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DP15
Date:
April, 2015
File:
PDF, 1.29 MB
english, 2015