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Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress
Lorenzi, P., Rao, R., Irrera, F.Volume:
55
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.06.083
Date:
August, 2015
File:
PDF, 868 KB
english, 2015