Degradation of 0.25μm GaN HEMTs under high temperature...

Microelectronics Reliability 2015 / 08 Vol. 55; Iss. 9-10

Degradation of 0.25μm GaN HEMTs under high temperature stress test

Dammann, M., Baeumler, M., Brückner, P., Bronner, W., Maroldt, S., Konstanzer, H., Wespel, M., Quay, R., Mikulla, M., Graff, A., Lorenzini, M., Fagerlind, M., van der Wel, P.J., Roedle, T.
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Volume:
55
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.06.042
Date:
August, 2015
File:
PDF, 1007 KB
english, 2015
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