Improved performance of AlGaN-based deep ultraviolet...

Semiconductor Science and Technology 2015 / 12 Vol. 30; Iss. 12

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers

Li, Lei, Tsutsumi, Tatsuya, Miyachi, Yuta, Miyoshi, Makoto, Egawa, Takashi
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/12/125012
Date:
December, 2015
File:
PDF, 635 KB
english, 2015
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