Formation of Ni Diffusion-Induced Surface Traps in GaN/AlxGa1−xN/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition
Kajen, R. S., Bera, L. K., Tan, H. R., Dolmanan, S. B., Cheong, Z. W., Tripathy, S.Volume:
45
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-015-4135-4
Date:
January, 2016
File:
PDF, 1.32 MB
english, 2016