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[IEEE 2015 Symposium on VLSI Circuits - Kyoto, Japan (2015.6.17-2015.6.19)] 2015 Symposium on VLSI Circuits (VLSI Circuits) - A 0.094um2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist
Koo, Kyung-Hoae, Wei, Liqiong, Keane, John, Bhattacharya, Uddalak, Karl, Eric A, Zhang, KevinYear:
2015
Language:
english
DOI:
10.1109/VLSIC.2015.7231282
File:
PDF, 977 KB
english, 2015