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SPIE Proceedings [SPIE SPIE LASE - San Francisco, California, USA (Saturday 21 January 2012)] Laser-based Micro- and Nanopackaging and Assembly VI - Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength
Morimoto, Kiyoshi, Suzuki, Nobuyasu, Liu, Xinbing, Samonji, Katsuya, Yamanaka, Kazuhiko, Yuri, Masaaki, Bachmann, Friedrich G., Pfleging, Wilhelm, Washio, Kunihiko, Amako, Jun, Hoving, Willem, Lu, YonVolume:
8244
Year:
2012
Language:
english
DOI:
10.1117/12.907145
File:
PDF, 644 KB
english, 2012