Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes
Vaskou, A. S., Niss, V. S., Kononenko, V. K., Turtsevich, A. S., Rubtsevich, I. I., Solov’ev, Ya. A., Kerentsev, A. F.Volume:
44
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739715080144
Date:
December, 2015
File:
PDF, 682 KB
english, 2015