The improvement of nitrogen doped Ge2Sb2Te5 on the phase...

  • Main
  • 2015 / 11
  • The improvement of nitrogen doped Ge2Sb2Te5 on the phase...
Solid-State Electronics 2015 / 11

The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions

Xu, Zhen, Liu, Bo, Chen, Yifeng, Zhang, Zhonghua, Gao, Dan, Wang, Heng, Song, Zhitang, Wang, Changzhou, Ren, Jiadong, Zhu, Nanfei, Xiang, Yanghui, Zhan, Yipeng, Feng, Songlin
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.11.001
Date:
November, 2015
File:
PDF, 1.74 MB
english, 2015
Conversion to is in progress
Conversion to is failed