Analytical Physical-Based Drain-Current Model of Amorphous...

IEEE Electron Device Letters 2015 / 12 Vol. 36; Iss. 12

Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction

Ghittorelli, Matteo, Torricelli, Fabrizio, Kovacs-Vajna, Zsolt Miklos
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2495326
Date:
December, 2015
File:
PDF, 904 KB
english, 2015
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