Al Incorporation at All Growth Stages of AlxGa1−xN...

Journal of Electronic Materials 2016 / 2 Vol. 45; Iss. 2

Al Incorporation at All Growth Stages of AlxGa1−xN Epilayers Using SiN Treatment

Benzarti, Z., Halidou, I., Touré, A., El Jani, B.
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Volume:
45
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-015-4240-4
Date:
February, 2016
File:
PDF, 1.66 MB
english, 2016
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