Random Threshold Voltage Variability Induced by Gate-Edge...

Applied Physics Express 2009 / 1 Vol. 2

Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Putra, Arifin Tamsir, Nishida, Akio, Kamohara, Shiro, Hiramoto, Toshiro
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.024501
Date:
January, 2009
File:
PDF, 924 KB
english, 2009
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