Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by...

Materials Science in Semiconductor Processing 2016 / 01 Vol. 41

Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer

Tao, Pengcheng, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, Liu, Jianxun, Zhu, Zhifu, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, Du, Guotong
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Volume:
41
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.09.022
Date:
January, 2016
File:
PDF, 1.93 MB
english, 2016
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