![](/img/cover-not-exists.png)
Effect of stress by dopants and nitrogen on grown-in defects in silicon
H Harada, Y Matsuo, K Tanahashi, A Koukitsu, N Inoue, K WadaVolume:
302-303
Year:
2001
Language:
english
Pages:
7
DOI:
10.1016/s0921-4526(01)00459-8
File:
PDF, 221 KB
english, 2001