On defects created in 45 keV H−-implanted n-type...

Physica B: Condensed Matter 2001 Vol. 308-310; Iss. none

On defects created in 45 keV H−-implanted n-type Cz Si: a fluence dependence and isochronal annealing study

Prakash N.K. Deenapanray
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Volume:
308-310
Year:
2001
Language:
english
Pages:
3
DOI:
10.1016/s0921-4526(01)00715-3
File:
PDF, 117 KB
english, 2001
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