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Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
Woo, Hyeonseok, Lee, Jongkyong, Jo, Yongcheol, Han, Jaeseok, Kim, Jongmin, Kim, Hyungsang, Roh, Cheong Hyun, Lee, Jun Ho, Park, Jungho, Hahn, Cheol-Koo, Im, HyunsikVolume:
15
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2015.06.004
Date:
September, 2015
File:
PDF, 851 KB
english, 2015