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The DX−-centre formation at high electric fields in planar-doped GaAs : Si
M. Asche, O.G. SarbeyVolume:
308-310
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(01)00804-3
File:
PDF, 104 KB
english, 2001