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C–V and G–V characterization of defects in ultrathin SiO2 thermally grown on RF plasma-hydrogenated silicon
S. Alexandrova, A. Szekeres, E. HalovaVolume:
308-310
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(01)00815-8
File:
PDF, 102 KB
english, 2001