Direct Evidence of the Overshoot Suppression in Ta2O5-Based...

IEEE Electron Device Letters 2015 / 10 Vol. 36; Iss. 10

Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

Fan, Yang-Shun, Zhang, Leqi, Crotti, Davide, Witters, Thomas, Jurczak, Malgorzata, Govoreanu, Bogdan
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2470081
Date:
October, 2015
File:
PDF, 1.23 MB
english, 2015
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