![](/img/cover-not-exists.png)
Raman study on H+-implantation effects in highly doped n-GaAs
P. Murugan, R. Kesavamoorthy, S. Amirthapandian, R. Saravanan, K. Ramachandran, N. KrishnamurthyVolume:
315
Year:
2002
Language:
english
Pages:
8
DOI:
10.1016/s0921-4526(01)01467-3
File:
PDF, 194 KB
english, 2002