Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers
Solovev, I A, Davydov, V G, Kapitonov, Yu V, Shapochkin, P Yu, Efimov, Yu P, Lovcjus, V A, Eliseev, S A, Petrov, V V, Ovsyankin, V VVolume:
643
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/643/1/012085
Date:
November, 2015
File:
PDF, 986 KB
english, 2015