Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation
E Cassan, S Galdin, P Dollfus, P HestoVolume:
272
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00338-5
File:
PDF, 157 KB
english, 1999