Effect of Si doping on the strain and defect structure of...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Effect of Si doping on the strain and defect structure of GaN thin films

L.T Romano, C.G Van de Walle, B.S Krusor, R Lau, J Ho, T Schmidt, J.W Ager III, W Götz, R.S Kern
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00404-4
File:
PDF, 260 KB
english, 1999
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