Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
R.Y Korotkov, M.A Reshchikov, B.W WesselsVolume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00411-1
File:
PDF, 112 KB
english, 1999