Defect introduction in epitaxially grown n-GAN during...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts

F.D Auret, S.A Goodman, G Myburg, F.K Koschnick, J.-M Spaeth, B Beaumont, P Gibart
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00412-3
File:
PDF, 132 KB
english, 1999
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