Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS
K Bonde Nielsen, L Dobaczewski, K Goscinski, R Bendesen, Ole Andersen, B Bech NielsenVolume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00437-8
File:
PDF, 90 KB
english, 1999