Hydrogenation and passivation of electron-beam-induced defects in N-type Si
Y. Ohmura, K. Takahashi, H. Saitoh, T. Kon, A. EnosawaVolume:
273-274
Year:
1999
Language:
english
Pages:
3
DOI:
10.1016/s0921-4526(99)00459-7
File:
PDF, 123 KB
english, 1999