Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon
P.H Citrin, D Muller, H.-J Gossmann, R Vanfleet, P.A NorthrupVolume:
273-274
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0921-4526(99)00465-2
File:
PDF, 197 KB
english, 1999