The photoluminescence mechanism of erbium in silicon: intensity dependence on excitation power and temperature
D.T.X Thao, C.A.J Ammerlaan, T GregorkiewiczVolume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00471-8
File:
PDF, 121 KB
english, 1999