Structural and electronic properties of doped InP/InGaAs...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE

A.B Henriques, L.K Hanamoto, R.F Oliveira, P.L Souza, L.C.D Gonçalves, B Yavich
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00516-5
File:
PDF, 143 KB
english, 1999
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