In-situ studies of point-defect complexes in silicon...

Physica B: Condensed Matter 1999 Vol. 273-274; Iss. none

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

N Yarykin, C.R Cho, R Zuhr, G Rozgonyi
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Volume:
273-274
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0921-4526(99)00531-1
File:
PDF, 112 KB
english, 1999
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